IndiumV3, Main, Repository, bibRecord, 00CE70

Optically-induced non-linear optical effects in indium-tin oxide crystalline films

Identifieur interne : 00CE70 ( Main/Repository ); précédent : 00CE69; suivant : 00CE71

Optically-induced non-linear optical effects in indium-tin oxide crystalline films

Auteurs : RBID : Pascal:03-0333219

Descripteurs français

Pascal (Inist)
- Effet non linéaire, Epaisseur, Génération harmonique optique, Génération harmonique 2, Etude expérimentale, Piégeage, Interface, Dopage, Bande interdite, Simulation numérique, Addition étain, Effet photoinduit, Indium oxyde, Semiconducteur III-V, Couche mince, Polycristal, Nanostructure, In2O3, In O, 4265K, 7867B.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Digital simulation, Doping, Energy gap, Experimental study, III-V semiconductors, Indium oxides, Interfaces, Nanostructures, Non linear effect, Optical harmonic generation, Photoinduced effect, Polycrystals, Second harmonic generation, Thickness, Thin films, Tin additions, Trapping.

Abstract

We have studied thin nanolayers (with thicknesses of about 1-2 nm) between In₂O₃:Sn (indium-tin oxide (ITO)) crystalline films and glass substrates using the photo-induced optical second harmonic generation (PISHG) method. The maximal PISHG response observed for the pump-probe delay times was about 26 ps. The performed experimental measurements and quantum chemical theoretical simulations show that the observed effects are caused by two factors. The first is caused by the film-glass interface potential gradient and the second is a consequence of additional trapping levels appearing in the energy gap, particularly due to Sn doping. PISHG may be considered as a sensitive tool for such kinds of semiconductors.

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Pascal:03-0333219

Le document en format XML

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<author><name sortKey="Kityk, I V" uniqKey="Kityk I">I. V. Kityk</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics WSP, Al. Armii Krajowej 13/15</s1>
<s2>Czestochowa</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Pologne</country>
<wicri:noRegion>Czestochowa</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Computer Modeling, University of Technology, ul Warszawska 24</s1>
<s2>Krakow</s2>
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<author><name sortKey="Ebothe, J" uniqKey="Ebothe J">J. Ebothe</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Université de Reims, UTAP-LMET, EA no 2061, UFR Sciences, BP 138, 21 rue Clement Ader</s1>
<s2>51685 Reims</s2>
<s3>FRA</s3>
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<author><name sortKey="Miedzinski, R" uniqKey="Miedzinski R">R. Miedzinski</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics WSP, Al. Armii Krajowej 13/15</s1>
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<author><name sortKey="Addou, M" uniqKey="Addou M">M. Addou</name>
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<author><name sortKey="Sieder, H" uniqKey="Sieder H">H. Sieder</name>
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<author><name sortKey="Karafiat, A" uniqKey="Karafiat A">A. Karafiat</name>
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<term>Energy gap</term>
<term>Experimental study</term>
<term>III-V semiconductors</term>
<term>Indium oxides</term>
<term>Interfaces</term>
<term>Nanostructures</term>
<term>Non linear effect</term>
<term>Optical harmonic generation</term>
<term>Photoinduced effect</term>
<term>Polycrystals</term>
<term>Second harmonic generation</term>
<term>Thickness</term>
<term>Thin films</term>
<term>Tin additions</term>
<term>Trapping</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet non linéaire</term>
<term>Epaisseur</term>
<term>Génération harmonique optique</term>
<term>Génération harmonique 2</term>
<term>Etude expérimentale</term>
<term>Piégeage</term>
<term>Interface</term>
<term>Dopage</term>
<term>Bande interdite</term>
<term>Simulation numérique</term>
<term>Addition étain</term>
<term>Effet photoinduit</term>
<term>Indium oxyde</term>
<term>Semiconducteur III-V</term>
<term>Couche mince</term>
<term>Polycristal</term>
<term>Nanostructure</term>
<term>In2O3</term>
<term>In O</term>
<term>4265K</term>
<term>7867B</term>
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<front><div type="abstract" xml:lang="en">We have studied thin nanolayers (with thicknesses of about 1-2 nm) between In<sub>2</sub>
O<sub>3</sub>
:Sn (indium-tin oxide (ITO)) crystalline films and glass substrates using the photo-induced optical second harmonic generation (PISHG) method. The maximal PISHG response observed for the pump-probe delay times was about 26 ps. The performed experimental measurements and quantum chemical theoretical simulations show that the observed effects are caused by two factors. The first is caused by the film-glass interface potential gradient and the second is a consequence of additional trapping levels appearing in the energy gap, particularly due to Sn doping. PISHG may be considered as a sensitive tool for such kinds of semiconductors.</div>
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<sZ>6 aut.</sZ>
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<fA14 i1="03"><s1>Université de Reims, UTAP-LMET, EA no 2061, UFR Sciences, BP 138, 21 rue Clement Ader</s1>
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<s3>FRA</s3>
<sZ>2 aut.</sZ>
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<sZ>4 aut.</sZ>
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<fA14 i1="05"><s1>University of Stuttgart, Electronic Micorscopy Group</s1>
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O<sub>3</sub>
:Sn (indium-tin oxide (ITO)) crystalline films and glass substrates using the photo-induced optical second harmonic generation (PISHG) method. The maximal PISHG response observed for the pump-probe delay times was about 26 ps. The performed experimental measurements and quantum chemical theoretical simulations show that the observed effects are caused by two factors. The first is caused by the film-glass interface potential gradient and the second is a consequence of additional trapping levels appearing in the energy gap, particularly due to Sn doping. PISHG may be considered as a sensitive tool for such kinds of semiconductors.</s0>
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Optically-induced non-linear optical effects in indium-tin oxide crystalline films

Optically-induced non-linear optical effects in indium-tin oxide crystalline films

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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